Table 4 Detail of the lasers and parameters
| Study ID | Laser type | Wave length (nm) | Output power (mW) | Number of irradiated points or area (cm2) | Irradiation time | Frequency | Dose (J/cm2) | Field diameter |
|---|---|---|---|---|---|---|---|---|
| Celestino No´brega 2013 | aluminum gallium arsenide diode laser | 830 | 40.6 | 4 points |
25 s per each 1 J/cm2, totally 125 s | after placing the separator | root apex 2 J/cm2,the other three points was 1 J/cm2, totally 5 J/cm2 | 2 mm |
| Won Tae Kim 2012 | semiconductor laser device with an AlGaInP diode | 635 | 6 | 4 | 30 seconds on each area | every 12 h for 1 week | NRa | 5.6 mm |
| Ladan Eslamian 2013 | Ga-Al-As laser | 810 | 100 | 10 | 20 s | laser was applied immediately and 24 hours later after placing the separators | 2 | NR |
| Esper MA 2011 | InGaAlP laser | 660 | 30 | 4 | 25 s each point | after placing the separator | 4 J/cm2 per point, totally 16 J/cm2 per tooth | 5 mm |
| Ida Marini 2013 | GaAs diode laser superpulsed wave | 910 | 160 | 6 | totally 340 s | The irradiation started immediately after placing orthodontic separators. | NR | 8 mm |
| Zhang HY 2014 | semiconductor laser |
650 and 830 | 30 | 4 | 30S each point,totally 120 s per tooth | after placing the separator | NR | 3-5 mm |